2N6660+JANTX N-Channel Enhancement MOSFET
From Defense Supply Center Columbus
@(VDS) (V) (Test Condition) | 30 |
@I(D) (A) (Test Condition) | 500m |
@V(DS) (V) (Test Condition) | 25 |
Absolute Max. Power Diss. (W) | 6.25 |
C(iss) Max. (F) | 50p |
I(D) Abs. Drain Current (A) | 2.0 |
I(DSS) Min. (A) | 10u |
I(GSS) Max. (A) | 100n |
Mil Number | JANTX2N6660 |
Military | Y |
Package | TO-39 |
V(BR)DSS (V) | 60 |
V(BR)GSS (V) | 30 |
g(fs) Max, (S) Trans. conduct, | 195m |
g(fs) Min. (S) Trans. conduct. | 170m |
r(DS)on Max. (Ohms) | 3.0 |
t(f) Max. (s) Fall time. | 5.0n |
t(r) Max. (s) Rise time | 5.0n |