ZXMN6A08E6QTA MOSFET N-CH 60V 2.8A SOT23-6
From Diodes Incorporated
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Datasheets | ZXMN6A08E6Q |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 5.8nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 459pF @ 40V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Drawings | SOT-23-6 Pin Out |
| Other Names | ZXMN6A08E6QTADITR |
| PCN Design/Specification | Leadframe Material Update 09/Apr/2014 Date Code Mark Update 13/Jan/2015 Date Code Revision 01 13/Jan/2015 |
| PCN Other | Copper Bond Wire and Wafer Source 07/Nov/2013 |
| Package / Case | SOT-23-6 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 1.1W |
| Product Photos | SOT-23-6 PKG |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 4.8A, 10V |
| Series | - |
| Standard Package | 3,000 |
| Supplier Device Package | SOT-26 |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
