VN10LF 150 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From DIODES Incorporated
Status | Transferred |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 0.1500 A |
Drain Current-Max (ID) | 0.1500 A |
Drain-source On Resistance-Max | 5 ohm |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 5 pF |
JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.2500 W |
Qualification Status | COMMERCIAL |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |