Datasheet.Directory

{"Absolute Max. Power Diss. (W)":"1.0k","V(CE)sat Max.(V)":"2.8","V(BR)CES (V)":"1.2k","I(C) Abs.(A) Collector Current":"100","Package":"Module-s/q","Circuits Per Package":"1"}...

{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"650 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"200 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"190 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Packa...

{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"480 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"110 ns","Collector Current-Max (IC)":"205 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPO...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HALF-BRIDGE 2, 7 PIN","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"470 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"210 ns","Collector Current-Max (IC)":"150 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GAT...

{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"145 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"700 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"Half Bridge1","Configuration":"Half Bridge","M...

{"Collector Current (DC) ":"145(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"34MM-1","Configuration":"Dual","Pin Count":"7"}...