Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Automotive","Continuous Drain Current":"1.3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"600(V)","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"45(W)","Operating Temp Range":"-50C to 150C","Package Type":"DPAK","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.009(ohm)","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Other Drawings":"AOD4xx Series TO-252 (D-PAK) Top AOD4xx Series TO-252 (D-PAK) Side","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"1.3A (Tc)","Gate Charge (Qg) @ Vgs":"8nC @ 10V","Product Photos":"TO-252-3","Rds On (Max) @ Id, Vgs":"9 Ohm @ 650mA, 10V","Datasheets":"AO(D,U)1N60 TO252 (DPAK) Pkg Drawing","FET Type":"MOSFET N-Channel, Metal ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"33 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"11.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4 A","Channel Type":"N-CHANNEL","FET Tech...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"QFET\u00ae","Standard Package":"2,000","Supplier Device Package":"D-Pak","Datasheets":"FQD1N60C, FQU1N60C D-PAK Tape and Reel Data","Rds On (Max) @ Id, Vgs":"11.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mount...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"1A (Tc)","Gate Charge (Qg) @ Vgs":"6.2nC @ 10V","Product Photos":"TO-252-3","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"11.5 Ohm @ 500mA, 10V","Datasheets":"FQD1N60C, FQU1N60C D-PAK Tape and Reel Data","FET Type":"MOSFET N-Channel, Metal Oxide"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"QFET\u00ae","Standard Package":"2,000","Supplier Device Package":"D-Pak","Datasheets":"FQD1N60, FQU1N60 D-PAK Tape and Reel Data","Rds On (Max) @ Id, Vgs":"11.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mountin...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"QFET\u00ae","Standard Package":"2,500","Supplier Device Package":"D-Pak","Datasheets":"FQD1N60, FQU1N60 D-PAK Tape and Reel Data","Rds On (Max) @ Id, Vgs":"11.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mountin...

{"C(iss) Max. (F)":"310p","Absolute Max. Power Diss. (W)":"40","@Pulse Width (s) (Condition)":"10u","g(fs) Max, (S) Trans. conduct,":".8","I(D) Abs. Max.(A) Drain Curr.":"800m","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"30n","r(DS)on Max. (Ohms)":"8.0","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"3.0","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":".5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"500m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"CASE AX057, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"600 V","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"1"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"AX057, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"1"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"AX057, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"1"}...