CY7C1310CV18-250BZC 2M X 8 QDR SRAM, 0.45 ns, PBGA165
From Cypress Semiconductor Corp.
| Status | ACTIVE |
| Access Time-Max (tACC) | 0.4500 ns |
| Memory Density | 1.68E7 deg |
| Memory IC Type | QDR SRAM |
| Memory Width | 8 |
| Mfr Package Description | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| Number of Functions | 1 |
| Number of Terminals | 165 |
| Number of Words | 2.10E6 words |
| Number of Words Code | 2M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 2M X 8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, LOW PROFILE |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 1.9 V |
| Supply Voltage-Min (Vsup) | 1.7 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Surface Mount | Yes |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 1 mm |
| Terminal Position | BOTTOM |
