CY14B104NA-BA20XIT 256K X 16 NON-VOLATILE SRAM, 20 ns, PBGA48
From Cypress Semiconductor Corp.
Status | ACTIVE |
Access Time-Max (tACC) | 20 ns |
Memory Density | 4.19E6 deg |
Memory IC Type | NON-VOLATILE SRAM |
Memory Width | 16 |
Mfr Package Description | 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48 |
Number of Functions | 1 |
Number of Terminals | 48 |
Number of Words | 262144 words |
Number of Words Code | 256K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 256K X 16 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3 V |
Surface Mount | Yes |
Temperature Grade | INDUSTRIAL |
Terminal Form | BALL |
Terminal Pitch | 0.7500 mm |
Terminal Position | BOTTOM |