CGH55030P2
C BAND, GaN, N-CHANNEL, RF POWER, HEMFET

From Cree, Inc.

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min120 V
FET TechnologyHIGH ELECTRON MOBILITY
Highest Frequency BandC BAND
Mfr Package DescriptionROHS COMPLIANT PACKAGE-2
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLATPACK
Surface MountYes
Terminal FinishNICKEL GOLD
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialGALLIUM NITRIDE
Transistor TypeRF POWER

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