C4D08120E DIODE SCHOTTKY 1.2KV 8A TO252-2
From Cree Inc.
| Capacitance @ Vr, F | 560pF @ 0V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 8A (DC) |
| Current - Reverse Leakage @ Vr | 250µA @ 1200V |
| Datasheets | C4D08120E |
| Diode Type | Silicon Carbide Schottky |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Surface Mount |
| Online Catalog | Silicon Carbide Schottky Diode |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Tube |
| Product Photos | TO-263 |
| Reverse Recovery Time (trr) | 0ns |
| Series | Z-Rec® |
| Speed | No Recovery Time > 500mA (Io) |
| Standard Package | 75 |
| Supplier Device Package | TO-252-2 |
| Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
| Voltage - Forward (Vf) (Max) @ If | 3V @ 2A |
