1MBI30L060 N-Channel IGBT
From Collmer Semiconductor, Inc.
@I(C) (A) (Test Condition) | 30 |
@V(GE) (Test Condition) | 15 |
Absolute Max. Power Diss. (W) | 120 |
I(C) Abs.(A) Collector Current | 30 |
I(CES) Max. (A) | 40m |
I(GES) Max. (A) | 100n |
Package | MODULE-var |
V(BR)CES (V) | 600 |
V(BR)GES (V) | 20 |
V(CE)sat Max.(V) | 3.5 |
V(GE)th Max. (V) | 6.0 |
t(d)off Max. (s) Off time | 1.0u |
t(f) Max. (s) Fall time. | 350n |
t(r) Max. (s) Rise time | 600n |
td(on) Max (s) On time delay | 800n |