NESG2107M33-T3-A
TRANS NPN 2GHZ M33

From CEL

CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 5mA, 1V
DatasheetsNESG2107M33
FamilyRF Transistors (BJT)
Frequency - Transition10GHz
Gain7dB ~ 10dB
Mounting TypeSurface Mount
Noise Figure (dB Typ @ f)0.9dB ~ 1.5dB @ 2GHz
Package / Case3-SMD, Flat Leads
PackagingTape & Reel (TR)
Power - Max130mW
Series-
Standard Package10,000
Supplier Device Package3-SuperMiniMold (M33)
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5V

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