NE3210S01-T1B RF JFET Transistors Super Lo Noise HJFET
From CEL
| Brand | CEL |
| Factory Pack Quantity | 4000 |
| Forward Transconductance - Min | 55 mS |
| Frequency | 12 GHz |
| Gain | 13.5 dB |
| Id - Continuous Drain Current | 70 mA |
| Manufacturer | CEL |
| Maximum Operating Temperature | + 125 C |
| Mounting Style | SMD/SMT |
| NF - Noise Figure | 0.35 dB |
| Package / Case | SO-1 |
| Packaging | Reel |
| Pd - Power Dissipation | 165 mW |
| Product Category | RF JFET Transistors |
| RoHS | Details |
| Technology | GaAs |
| Transistor Polarity | N-Channel |
| Transistor Type | HFET |
| Vds - Drain-Source Breakdown Voltage | 4 V |
| Vgs - Gate-Source Breakdown Voltage | - 3 V |
