Infineon.com/CFY67-08
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"ROUND","Status":"TRANSFERRED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIF...
1489 Bytes - 20:14:44, 26 June 2024
Infineon.com/CFY67-08ES
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package...
1433 Bytes - 20:14:44, 26 June 2024
Infineon.com/CFY67-08P
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package...
1428 Bytes - 20:14:44, 26 June 2024
Infineon.com/CFY67-08PP
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package...
1436 Bytes - 20:14:44, 26 June 2024
Triquint.com/CFY67-08
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11.5 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Surface Mount":"Yes","Mfr Package Descr...
1366 Bytes - 20:14:44, 26 June 2024
Triquint.com/CFY67-08H
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"S...
1421 Bytes - 20:14:44, 26 June 2024
Triquint.com/CFY67-08PES
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"S...
1433 Bytes - 20:14:44, 26 June 2024
Triquint.com/CFY67-08PH
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"S...
1427 Bytes - 20:14:44, 26 June 2024
Triquint.com/CFY67-08PS
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"S...
1424 Bytes - 20:14:44, 26 June 2024
Triquint.com/CFY67-08S
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"S...
1419 Bytes - 20:14:44, 26 June 2024
