Triquint.com/CFY66-08
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Surface Mount":"Yes","Mfr Package Descrip...
1366 Bytes - 20:45:29, 26 June 2024
Triquint.com/CFY66-08ES
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"10 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE"...
1401 Bytes - 20:45:29, 26 June 2024
Triquint.com/CFY66-08H
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"10 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE"...
1391 Bytes - 20:45:29, 26 June 2024
Triquint.com/CFY66-08P
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"10 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE"...
1393 Bytes - 20:45:29, 26 June 2024
Triquint.com/CFY66-08PES
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"10 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE"...
1403 Bytes - 20:45:29, 26 June 2024
Triquint.com/CFY66-08PH
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"10 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE"...
1401 Bytes - 20:45:29, 26 June 2024
Triquint.com/CFY66-08PP
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"10 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE"...
1401 Bytes - 20:45:29, 26 June 2024
Triquint.com/CFY66-08S
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"10 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE"...
1395 Bytes - 20:45:29, 26 June 2024
