Datasheet.Directory

{"I(T) Max.(A) On-state Current":"1190±","dv/dt Min. (V/us)":"1.0k","I(TSM) Max. (A)":"22.5k","Package":"TO-200var75","V(DRM) Max.(V)Rep.Pk.Off Volt.":"1.2k","@Temp. (°C) (Test Condition)":"85","@ t(w) (s) (Test Condition)":"10m","I(GT) Max. (A)":"250m","V(GT) Max.(V)":"2.0","Military":"N","t(q) Typ. (s)":"240u"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 42\u00b5A","Package / Case":"8-PowerTDFN","Current - Continuous Drain (Id) @ 25\u00b0C":"8.6A (Ta), 44A (Tc)","Gate Charge (Qg) @ Vgs":"34nC @ 10V","Rds On (Max) @ Id, Vgs":"19 mOhm @ 39A, 10V","Product Photos":"8-PowerTDFN","PCN Other":"Multiple Changes 09/Jul/2014","Datasheets":"BSC190N12NS3 G","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"5,000","Drain to Source Voltage (Vdss)":"120V","Onlin...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0190 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"176 A","Channel Type":"N-CHANNEL","FET Tec...

{"Polarity":"N","Drain-Source On-Res":"0.019(ohm)","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"69(W)","Continuous Drain Current":"8.6(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"120(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TDSON EP","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Repetitive Peak Off-state Voltage":"1200 V","Terminal Form":"UNSPECIFIED","Package Style":"DISK BUTTON","RMS On-state Current-Max":"2770 A","Repetitive Peak Reverse Voltage":"1200 V","DC Gate Trigger Current-Max":"250 mA","Number of Elements":"1","Trigger Device Type":"SCR","EU RoHS Compliant":"Yes","Terminal Position":"UNSPECIFIED","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termina...

{"Brand":"Infineon Technologies","Product Category":"SCRs","Part # Aliases":"T1190N12TOF","Manufacturer":"Infineon"}...

{"Category":"Integrated Circuits (ICs)","Package / Case":"176-LFBGA","Peripherals":"DMA, POR, WDT","Operating Temperature":"-20\u00b0C ~ 85\u00b0C","Voltage - Supply (Vcc/Vdd)":"1.71 V ~ 1.89 V","Program Memory Size":"-","RAM Size":"16K x 8","Packaging":"Tray","Product Photos":"176-LFBGA Series","Program Memory Type":"ROMless","Connectivity":"EBI/EMI, Ethernet, FIFO, SCI, SIO","Datasheets":"SH7619 Group Hardware Manual","Standard Package":"1","EEPROM Size":"-","Oscillator Type":"Internal","Number of I/O":"7...