Infineon.com/BSZ16DN25NS3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"120 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10.9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Tec...
1596 Bytes - 22:49:47, 28 June 2024
Infineon.com/BSZ16DN25NS3GATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"62.5(W)","Continuous Drain Current":"10.9(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"250(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TSDSON EP","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1542 Bytes - 22:49:47, 28 June 2024