Product Datasheet Search Results:
8 Pages, 298 KB, Original- BSP296L6433
- Infineon Technologies Ag
- 1.1 A, 100 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSP296L6433
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.79 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4.4 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1505 Bytes - 14:54:45, 18 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSP296.pdf | 0.29 | 1 | Request |
