Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"45 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.4800 A","Channel Type":"N-CHANNEL","Chin...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 94\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP125","Rds On (Max) @ Id, Vgs":"45 Ohm @ 120mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @ Vds":"150pF @ 25V","Drain to Source Voltage (Vdss)":"600V","Current -...

{"Category":"MOSFET","Maximum Drain Source Voltage":"600 V","Typical Rise Time":"14.4 ns","Typical Turn-Off Delay Time":"20 ns","Description":"Value","Maximum Continuous Drain Current":"0.12 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"7.7 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"45@10V Ohm","Manufacturer":"Infineon Technologies","Typical Fall Time":"110 ns"}...