Product Datasheet Search Results:
10 Pages, 483 KB, Original- BSC050N03LSGXT
- Infineon Technologies Ag
- 18 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSC050N03LSGXT
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"35 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-CHANNEL"...
1606 Bytes - 06:55:13, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSC050N03LSG.pdf | 0.67 | 1 | Request |
