Product Datasheet Search Results:

BSC050N03LSG.pdf10 Pages, 695 KB, Original
BSC050N03LSGATMA1.pdf11 Pages, 463 KB, Original
BSC050N03LSGATMA1
Infineon Technologies
MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
BSC050N03LSGXT.pdf10 Pages, 483 KB, Original
BSC050N03LSGXT
Infineon Technologies Ag
18 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Infineon.com/BSC050N03LSG
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"35 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A",...
1649 Bytes - 06:59:37, 01 December 2024
Infineon.com/BSC050N03LSGATMA1
{"Product Category":"MOSFET","Series":"BSC050N03","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1126 Bytes - 06:59:37, 01 December 2024
Infineon.com/BSC050N03LSGXT
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"35 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0075 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-CHANNEL"...
1606 Bytes - 06:59:37, 01 December 2024

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