Datasheet.Directory

{"Frequency (Max)":"2900(MHz)","Frequency (Min)":"2700(MHz)","Channel Mode":"Enhancement","Continuous Drain Current":"33(A)","Mounting":"Surface Mount","Forward Transconductance (Typ)":"16.2(S)","Rad Hardened":"No","Mode Of Operation":"Pulsed RF","Channel Type":"N","Operating Temp Range":"-65C to 150C","Drain Efficiency (Typ)":"50(%)","Package Type":"SOT-539B","Power Gain (Typ)@Vds":"13.5@32V(dB)","Drain Source Voltage (Max)":"60(V)","Screening Level":"Military","Pin Count":"5","Number of Elements":"2","Out...

{"Frequency (Min)":"2700(MHz)","Channel Mode":"Enhancement","Continuous Drain Current":"33(A)","Mounting":"Surface Mount","Forward Transconductance (Typ)":"16.2(S)","Rad Hardened":"No","Frequency (Max)":"2900(MHz)","Channel Type":"N","Packaging":"Bulk","Mode Of Operation":"Pulsed RF","Operating Temp Range":"-65C to 150C","Drain Efficiency (Typ)":"50(%)","Package Type":"SOT-539B","Drain Source Voltage (Max)":"60(V)","Screening Level":"Military","Output Power (Max)":"350(TYP)","Pin Count":"5","Number of Eleme...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"33 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface...

{"Category":"Discrete Semiconductor Products","Transistor Type":"LDMOS (Dual), Common Source","Voltage - Rated":"65V","Family":"RF FETs","Series":"-","Noise Figure":"-","Package / Case":"SOT539B","Supplier Device Package":"SOT539B","Voltage - Test":"32V","Packaging":"Tray","Datasheets":"BLS7G2729L(S)-350P","Frequency":"-","Gain":"13dB","Standard Package":"20","Current - Test":"200mA","Current Rating":"-","Power - Output":"350W","Other Names":"934065661112 BLS7G2729LS-350P1"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"65 V","Typical Rise Time":"20 ns","Description":"Value","Channel Mode":"Enhancement","Package":"5SOT-539B","Mounting":"Surface Mount","Maximum Gate Source Voltage":"13 V","Operating Temperature":"-65 to 200 \u00b0C","RDS-on":"65(Typ)@6.05V Ohm","Manufacturer":"NXP Semiconductors","Typical Fall Time":"6 ns"}...