{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"160","Collector-emitter Voltage-Max":"45 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.5000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"R...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6250 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"45 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"S...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6250 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"45 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"S...

{"Collector Current (DC) ":"0.8(A)","Configuration":"Single","Transistor Polarity":"NPN","Collector-Emitter Voltage":"45(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Pin Count":"3","Packaging":"Ammo Pack","Category ":"Bipolar Small Signal","Operating Temp Range":"-55C to 150C","Frequency":"100(MHz)","Package Type":"TO-92","DC Current Gain":"160","Output Power":"Not Required(W)","Power Dissipation":"0.625(W)","Operating Temperature Classification":"Military","Number of El...

{"Collector Current (DC) ":"0.8(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"45(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Packaging":"Box","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Power Dissipation":"0.625(W)","Operating Temp Range":"-55C to 150C","Frequency":"100(MHz)","Package Type":"TO-92","Rad Hardened":"No","DC Current Gain":"160","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements...

{"Collector Current (DC) ":"0.8 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"0.8 A","Collector-Emitter Voltage":"45 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Frequency (Max)":"100 MHz","Operating Temperature Classification":"Military","Power Dissipation":"0.625 W","Operating Temp Range":"-55C to 150C","Frequency":"100 MHz","Package Type":"TO-92","Rad Hardened":"No","DC Current Gain":"160","DC Current Gain (Min)":"160","Pin Count":"3","Num...

{"@I(C) (A) (Test Condition)":"100m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"600m","I(C) Abs.(A) Collector Current":"800m","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"100M","V(BR)CEO (V)":"45","Package":"TO-18","h(FE) Min. Static Current Gain":"160","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"15p"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"160","Collector-emitter Voltage-Max":"45 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.8000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"R...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","Catalog Drawings":"TO-92 Side 2","Other Drawings":"TO-92 Side 1 TO-92 Bottom","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 300mA, 1V","Frequency - Transition":"210MHz","Voltage - Collector Emitter Breakdown (Max)":"45V","Product Training Modules":"Diode Handling and Mounting","Datasheets":"BC337,338-16,25,40","Standard Package":"2,000","Transistor Type":"NPN...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6250 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"160","Collector-emitter Voltage-Max":"45 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"210 MHz","Collector Current-Max (IC)":"0.8000 A","EU RoHS Compliant":"Yes","Terminal Position":"BOTT...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"500mA","Frequency - Transition":"100MHz","Transistor Type":"NPN","Product Photos":"TO-92-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Voltage - Collector Emitter Breakdown (Max)":"45V","Power - Max":"625mW","Packaging":"Bulk","Datasheets":"BC817(W), BC337","Current - Collector Cutoff (Max)":"-","Supplier Device Packag...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"500mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 100mA, 1V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"45V","Supplier Device Package":"TO-92-3","Packaging":...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"500mA","Frequency - Transition":"100MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Voltage - Collector Emitter Breakdown (Max)":"45V","Power - Max":"625mW","Packaging":"Cut Tape (CT)","Datasheets":"BC817(W), BC337","Curre...

{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Collector Current-Max (IC)":"0.8000 A","Package Shape":"ROUND","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"45 V","Terminal Position":"BOTTOM","Transistor Application"...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 100mA, 1V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"45V","Supplier Device Package":"TO-92-3","Packaging":"Tape &...

{"Collector Current (DC) ":"0.8(A)","Transistor Polarity":"NPN","Power Dissipation":"0.625(W)","Collector-Emitter Voltage":"45(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Operating Temp Range":"-55C to 150C","Pin Count":"3","Packaging":"Tape and Reel","Category ":"Bipolar Small Signal","Rad Hardened":"No","Frequency":"210(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"50(V)","DC Current Gain":"160","Package Type":"TO-92","Configuration":"Single","Operating Temperature Clas...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 100mA, 1V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"45V","Supplier Device Package":"TO-92 (TO-226)","Packaging":...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 100mA, 1V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"45V","Supplier Device Package":"TO-92-3","Packaging":"Tape &...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 100mA, 1V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"45V","Supplier Device Package":"TO-92-3","Packaging":"Tape &...

{"V(CE)sat Max.(V)":".70","Absolute Max. Power Diss. (W)":"625m","V(BR)CBO (V)":"50","h(FE) Min. Static Current Gain":"160","I(C) Abs.(A) Collector Current":"800m","h(FE) Max. Current gain.":"400","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"45","Package":"TO-92","f(T) Min. (Hz) Transition Freq":"210M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"50m","V(BR)CEO (V)":"45","Military":"N","@I(C) (A) (Test Condition)":"500m","C(obo) (Max) (F...

{"Packaging":"Ammo Pack","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"NPN","Factory Pack Quantity":"4000","Brand":"Taiwan Semiconductor","Mounting Style":"Through Hole","Package \/ Case":"TO-92-3","Manufacturer":"Taiwan Semiconductor"}...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"SC-43, 2-5F1G, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"160","Collector-emitter Voltage-Max":"45 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"0.5000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transist...

{"Collector Current (DC) ":"0.8(A)","Configuration":"Single","Transistor Polarity":"NPN","Category ":"Bipolar Small Signal","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Collector-Emitter Voltage":"45(V)","Rad Hardened":"No","Packaging":"Box","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Frequency":"100(MHz)","Package Type":"TO-92","Collector-Base Voltage":"50(V)","DC Current Gain":"160","Output Power":"Not Required(W)","Power Dissipation":"0.625(W)","Pi...

{"Collector Current (DC) ":"0.8(A)","Transistor Polarity":"NPN","Operating Temperature Classification":"Military","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Collector-Emitter Voltage":"45(V)","Rad Hardened":"No","Category ":"Bipolar Small Signal","Packaging":"Ammo Pack","Power Dissipation":"0.625(W)","Operating Temp Range":"-55C to 150C","Frequency":"100(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"50(V)","DC Current Gain":"160","Package Type":"TO-92","Configuration":"Singl...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

"Medium Power, General Purpose, BC337-25, Silicon, PNP, 360mW, 50V, 45V, 5V, 800mA, 150°C, 60MHz, 20, 160MIN, SIE, TO92-1"...

{"@I(C) (A) (Test Condition)":"100m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"600m","I(C) Abs.(A) Collector Current":"800m","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"100M","V(BR)CEO (V)":"45","Package":"TO-5","h(FE) Min. Static Current Gain":"160","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"15p"}...

"Medium Power, General Purpose, TBC337-25, Silicon, PNP, 360mW, 50V, 45V, 5V, 800mA, 150°C, 60MHz, 20, 160MIN, TOS, TO92-1"...

{"@I(C) (A) (Test Condition)":"100m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"600m","I(C) Abs.(A) Collector Current":"800m","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"100M","V(BR)CEO (V)":"45","Package":"Chip","h(FE) Min. Static Current Gain":"160","V(BR)CBO (V)":"50","Military":"N","C(obo) (Max) (F)":"15p"}...