J12TE3-66D-R02M Infrared-Optimized Photodiode - For room temp operation,specd at 22C
From EG&G, Inc.
| @Wavelength(m)(Test Condition) | 3.4u |
| C(T) Max. (F) Capacitance | 400p |
| NEP Max.(W/(Hz)1/2) | .07 |
| Package | TO-66var |
| Photosensitive Area (mm2) | 2.0 |
| Re Min.(A/W) Responsivity | 1.5 |
| Semiconductor Material | InAs |
| Spectral Response High (m) | 3.8u |
| Spectral Response Low (m) | 1.0u |
