MRF555T RF Bipolar Transistors RF Transistor
From Advanced Semiconductor, Inc.
Brand | Advanced Semiconductor, Inc. |
Collector- Emitter Voltage VCEO Max | 16 V |
Continuous Collector Current | 500 mA |
DC Collector/Base Gain hfe Min | 50 |
Emitter- Base Voltage VEBO | 3 V |
Frequency | 470 MHz |
Manufacturer | Advanced Semiconductor, Inc. |
Maximum Operating Temperature | + 200 C |
Minimum Operating Temperature | - 65 C |
Mounting Style | SMD/SMT |
Package / Case | Case 317D-02 |
Packaging | Tray |
Pd - Power Dissipation | 3 W |
Product Category | RF Bipolar Transistors |
RoHS | Details |
Technology | Si |
Transistor Polarity | NPN |
Transistor Type | Bipolar |