MSC81111
L BAND, Si, NPN, RF POWER TRANSISTOR

From Advanced Semiconductor, Inc.

StatusACTIVE
Case ConnectionBASE
Collector Current-Max (IC)0.6000 A
Collector-base Capacitance-Max6.5 pF
ConfigurationSINGLE
Highest Frequency BandL BAND
Mfr Package DescriptionHLP-1, 2 PIN
Number of Elements1
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Surface MountYes
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor PolarityNPN
Transistor TypeRF POWER

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