MS1001
RF Bipolar Transistors RF Transistor

From Advanced Semiconductor, Inc.

BrandAdvanced Semiconductor, Inc.
Collector- Emitter Voltage VCEO Max18 V
ConfigurationSingle Dual Emitter
Continuous Collector Current20 A
DC Collector/Base Gain hfe Min20
Emitter- Base Voltage VEBO4 V
Frequency30 MHz
ManufacturerAdvanced Semiconductor, Inc.
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Mounting StyleScrew
Package / CaseM174
PackagingTray
Pd - Power Dissipation270 W
Product CategoryRF Bipolar Transistors
RoHSDetails
TechnologySi
Transistor PolarityNPN
Transistor TypeBipolar Power

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