MRF581A
RF Bipolar Transistors RF Transistor

From Advanced Semiconductor, Inc.

BrandAdvanced Semiconductor, Inc.
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current200 mA
DC Collector/Base Gain hfe Min90
Emitter- Base Voltage VEBO2.5 V
Frequency1 GHz
ManufacturerAdvanced Semiconductor, Inc.
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Mounting StyleSMD/SMT
Package / CaseMacro-X
PackagingTray
Pd - Power Dissipation1.25 W
Product CategoryRF Bipolar Transistors
RoHSDetails
TechnologySi
Transistor PolarityNPN
Transistor TypeBipolar

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