MRF557
RF Bipolar Transistors RF Transistor

From Advanced Semiconductor, Inc.

BrandAdvanced Semiconductor, Inc.
Collector- Emitter Voltage VCEO Max16 V
ConfigurationSingle
Continuous Collector Current400 mA
DC Collector/Base Gain hfe Min90
Emitter- Base Voltage VEBO4 V
Frequency800 MHz
ManufacturerAdvanced Semiconductor, Inc.
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseCase 317D-02
PackagingTray
Pd - Power Dissipation3 W
Product CategoryRF Bipolar Transistors
RoHSDetails
TechnologySi
Transistor PolarityNPN
Transistor TypeBipolar Power

External links