MRF555T
RF Bipolar Transistors RF Transistor

From Advanced Semiconductor, Inc.

BrandAdvanced Semiconductor, Inc.
Collector- Emitter Voltage VCEO Max16 V
Continuous Collector Current500 mA
DC Collector/Base Gain hfe Min50
Emitter- Base Voltage VEBO3 V
Frequency470 MHz
ManufacturerAdvanced Semiconductor, Inc.
Maximum Operating Temperature+ 200 C
Minimum Operating Temperature- 65 C
Mounting StyleSMD/SMT
Package / CaseCase 317D-02
PackagingTray
Pd - Power Dissipation3 W
Product CategoryRF Bipolar Transistors
RoHSDetails
TechnologySi
Transistor PolarityNPN
Transistor TypeBipolar

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