AT451211
L BAND, 8.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

From Advanced Semiconductor, Inc.

StatusACTIVE
Breakdown Voltage-Min45 V
Diode Cap Tolerance10 %
Diode Capacitance Ratio-Min5.8
Diode Capacitance-Nom (Cd)8.2 pF
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Frequency BandL BAND
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleMICROWAVE
Quality Factor-Min1600
Surface MountYes
Terminal FormNO LEAD
Terminal PositionEND
Variable Capacitance Diode ClassificationABRUPT

External links