AT301120 S BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
From Advanced Semiconductor, Inc.
| Status | ACTIVE |
| Breakdown Voltage-Min | 30 V |
| Diode Cap Tolerance | 10 % |
| Diode Capacitance Ratio-Min | 4.2 |
| Diode Capacitance-Nom (Cd) | 6.8 pF |
| Diode Element Material | SILICON |
| Diode Type | VARIABLE CAPACITANCE DIODE |
| Frequency Band | S BAND |
| Number of Terminals | 2 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | ROUND |
| Package Style | MICROWAVE |
| Quality Factor-Min | 2400 |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | END |
| Variable Capacitance Diode Classification | ABRUPT |
