ASI10612
HF BAND, Si, NPN, RF POWER TRANSISTOR

From Advanced Semiconductor, Inc.

StatusACTIVE
Collector Current-Max (IC)10 A
Collector-base Capacitance-Max220 pF
Collector-emitter Voltage-Max55 V
ConfigurationSINGLE
Highest Frequency BandHIGH FREQUENCY BAND
Mfr Package Description0.500 INCH, FM-4
Number of Elements1
Number of Terminals4
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleFLANGE MOUNT
Terminal FormFLAT
Terminal PositionRADIAL
Transistor Element MaterialSILICON
Transistor PolarityNPN
Transistor TypeRF POWER

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