ASI10524
L BAND, Si, NPN, RF POWER TRANSISTOR

From Advanced Semiconductor, Inc.

StatusACTIVE
Collector Current-Max (IC)0.6000 A
Collector-base Capacitance-Max6.5 pF
Collector-emitter Voltage-Max35 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Highest Frequency BandL BAND
Number of Elements1
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleFLANGE MOUNT
Terminal FormFLAT
Terminal PositionRADIAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor PolarityNPN
Transistor TypeRF POWER

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