ASI1010 L BAND, Si, NPN, RF POWER TRANSISTOR
From Advanced Semiconductor, Inc.
| Status | ACTIVE |
| Collector Current-Max (IC) | 1 A |
| Collector-base Capacitance-Max | 10 pF |
| Collector-emitter Voltage-Max | 35 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Highest Frequency Band | L BAND |
| Mfr Package Description | 0.250 INCH, HERMETIC SEALED, FM-2 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | ROUND |
| Package Style | FLANGE MOUNT |
| Terminal Form | FLAT |
| Terminal Position | RADIAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Polarity | NPN |
| Transistor Type | RF POWER |
