APT6030HJN Half Bridge MOSFET Power Module - VGS(TH) 2V min/4V max at 1.0mA
From Advanced Power Technology
| Absolute Max. Power Diss. (W) | 360 |
| Circuits Per Package | 2 |
| I(D) Abs. Drain Current (A) | 23 |
| I(DSS) Min. (A) | 250u |
| I(GSS) Max. (A) | 100n |
| Package | Module-s/q |
| V(BR)DSS (V) | 600 |
| V(BR)GSS (V) | 30 |
| r(DS)on Max. (Ohms) | 300m |
| t(f) Max. (s) Fall time. | 100n |
| t(r) Max. (s) Rise time | 70n |
