5SND0800M170100 800 A, 1700 V, N-CHANNEL IGBT
From Abb Switzerland Ltd. Semiconductors
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Collector Current-Max (IC) | 800 A |
| Collector-emitter Voltage-Max | 1700 V |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Mfr Package Description | HIPAK-10 |
| Number of Elements | 2 |
| Number of Terminals | 10 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | GENERAL PURPOSE SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | INSULATED GATE BIPOLAR |
| Turn-off Time-Nom (toff) | 1060 ns |
| Turn-on Time-Nom (ton) | 655 ns |
