5SMY12M1200 150 A, 1200 V, N-CHANNEL IGBT
From Abb Switzerland Ltd. Semiconductors
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Collector Current-Max (IC) | 150 A |
| Collector-emitter Voltage-Max | 1200 V |
| Configuration | SINGLE |
| Mfr Package Description | 13.50 X 13.50 MM, DIE-2 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | UNSPECIFIED |
| Package Shape | SQUARE |
| Package Style | UNCASED CHIP |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | UPPER |
| Transistor Element Material | SILICON |
| Transistor Type | INSULATED GATE BIPOLAR |
| Turn-off Time-Nom (toff) | 605 ns |
| Turn-on Time-Nom (ton) | 280 ns |
