Product Datasheet Search Results:
- APTGT75X120E3
- Advanced Power Technologies
- APTGT75X120E3
- APTGT75X120E3
- Microsemi Corp.
- 100 A, 1200 V, N-CHANNEL IGBT
- APTGT75X120E3G
- Microsemi Corp.
- 100 A, 1200 V, N-CHANNEL IGBT
Product Details Search Results:
Microsemi.com/APTGT75X120E3
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-33","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"610 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"MOTOR CONTROL","Turn-on Time-Nom (ton)":"330 ns","Collector Current-Max (IC)":"100 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Ty...
1371 Bytes - 16:56:02, 18 December 2024
Microsemi.com/APTGT75X120E3G
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"610 ns","Collector Current-Max (IC)":"100 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"330 ns","EU RoHS Compliant":"Yes","Configuration":"BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL...
1428 Bytes - 16:56:02, 18 December 2024