Product Datasheet Search Results:
3 Pages, 225 KB, Original- APTGT150X120E3
- Advanced Power Technologies
- APTGT150X120E3
5 Pages, 283 KB, Original- APTGT150X120E3G
- Advanced Power Technology
- 3 Phase bridge Trench + Field Stop IGBT Power Module
3 Pages, 223 KB, Original- APTGT150X120E3
- Microsemi Corp.
- 220 A, 1200 V, N-CHANNEL IGBT
5 Pages, 283 KB, Original- APTGT150X120E3G
- Microsemi Corp.
- 220 A, 1200 V, N-CHANNEL IGBT
Product Details Search Results:
Microsemi.com/APTGT150X120E3
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-33","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"610 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"MOTOR CONTROL","Turn-on Time-Nom (ton)":"350 ns","Collector Current-Max (IC)":"220 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Ty...
1372 Bytes - 04:00:20, 25 November 2024
Microsemi.com/APTGT150X120E3G
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"610 ns","Collector Current-Max (IC)":"220 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"350 ns","EU RoHS Compliant":"Yes","Configuration":"BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL...
1452 Bytes - 04:00:20, 25 November 2024
