Product Datasheet Search Results:
3 Pages, 213 KB, Original- APTGF125X60E3
- Advanced Power Technologies
- APTGF125X60E3
3 Pages, 211 KB, Original- APTGF125X60E3
- Microsemi Corp.
- 180 A, 600 V, N-CHANNEL IGBT
3 Pages, 211 KB, Original- APTGF125X60E3G
- Microsemi Corp.
- 180 A, 600 V, N-CHANNEL IGBT
Product Details Search Results:
Microsemi.com/APTGF125X60E3
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-33","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"260 ns","Collector-emitter Voltage-Max":"600 V","Transistor Application":"MOTOR CONTROL","Turn-on Time-Nom (ton)":"155 ns","Collector Current-Max (IC)":"180 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Typ...
1367 Bytes - 01:50:14, 22 November 2024
Microsemi.com/APTGF125X60E3G
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"260 ns","Collector Current-Max (IC)":"180 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"155 ns","EU RoHS Compliant":"Yes","Configuration":"BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL"...
1426 Bytes - 01:50:14, 22 November 2024
