Datasheet.Directory

{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"55n","Absolute Max. Power Diss. (W)":"310","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"71n","I(D) Abs. Drain Current (A)":"23","Package":"TO-247AD","Military":"N","r(DS)on Max. (Ohms)":"300m"}...

{"@V(DS) (V) (Test Condition)":"1k","Package":"Chip","I(DSS) Max. (A)":"250u","I(GSS) Max. (A)":"100n","V(BR)DSS (V)":"600","@I(D) (A) (Test Condition)":"1","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"300m","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2"}...

{"t(r) Max. (s) Rise time":"70n","Absolute Max. Power Diss. (W)":"360","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","Package":"Module-s/q","V(BR)DSS (V)":"600","Circuits Per Package":"2","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"100n","I(D) Abs. Drain Current (A)":"23","r(DS)on Max. (Ohms)":"300m"}...

{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"55n","Absolute Max. Power Diss. (W)":"310","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"71n","I(D) Abs. Drain Current (A)":"23","Package":"TO-247AD","Military":"N","r(DS)on Max. (Ohms)":"330m"}...

{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"55n","Absolute Max. Power Diss. (W)":"310","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"71n","I(D) Abs. Drain Current (A)":"19","Package":"TO-247AD","Military":"N","r(DS)on Max. (Ohms)":"350m"}...

{"C(iss) Max. (F)":"4.3n","Absolute Max. Power Diss. (W)":"280","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"115n","r(DS)on Max. (Ohms)":"390m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"68","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-247AD","Military":"N","td(on) Max (s) On time delay":"25n","I(DSS) Max. (A)":"250u","@(VDS) (V) (Te...

{"C(iss) Max. (F)":"4.3n","Absolute Max. Power Diss. (W)":"280","V(BR)DSS (V)":"600","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"115n","r(DS)on Max. (Ohms)":".39","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"68","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-263AB","Military":"N","td(on) Max (s) On time delay":"25n","I(DSS) Max. (A)":"2...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"23(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Power Dissipation":"360(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...