Product Datasheet Search Results:
4 Pages, 98 KB, Original- AP9997GH
- Advanced Power Electronics Corp. Usa
- 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
4 Pages, 98 KB, Original- AP9997GH-HF
- Advanced Power Electronics Corp. Usa
- 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Product Details Search Results:
A-power.com.tw/AP9997GH
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"30 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"11 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOS...
1455 Bytes - 03:02:55, 06 October 2024
A-power.com.tw/AP9997GH-HF
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"30 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"11 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type...
1493 Bytes - 03:02:55, 06 October 2024
