Product Datasheet Search Results:
- AP9585GM
- Advanced Power Electronics Corp. Usa
- 2.7 A, 80 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET
- AP9585GM-HF
- Advanced Power Electronics Corp. Usa
- 2.7 A, 80 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP9585GM
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"80 V","T...
1483 Bytes - 20:37:16, 06 October 2024
A-power.com.tw/AP9585GM-HF
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"80 V","T...
1520 Bytes - 20:37:16, 06 October 2024