Product Datasheet Search Results:

AP4521GEH.pdf7 Pages, 117 KB, Original
AP4521GEH
Advanced Power Electronics Corp. Usa
11.7 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252

Product Details Search Results:

A-power.com.tw/AP4521GEH
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11.7 A","Configuration":"COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"40 V","Transisto...
1539 Bytes - 11:03:34, 25 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
AP45401.pdf0.021Request
3WJ9111-0AP45.pdf50.431Request
6FC5800-0AP45-0YB0.pdf3.031Request
1SAP450100R0001.pdf0.111Request
1SAP450200R0001.pdf0.161Request
1SAP450700R0001.pdf0.291Request
1SAP450300R0001.pdf0.161Request
1SAP450600R0001.pdf0.151Request
1SAP450500R0001.pdf0.161Request
1SAP451000R0001.pdf0.211Request
1SAP450800R0001.pdf0.111Request
1SAP450900R0001.pdf0.211Request