Product Datasheet Search Results:
- AP3989I
- Advanced Power Electronics Corp. Usa
- 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
- AP3989I-HF
- Advanced Power Electronics Corp. Usa
- 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
A-power.com.tw/AP3989I
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V"...
1510 Bytes - 03:46:51, 06 October 2024
A-power.com.tw/AP3989I-HF
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V"...
1544 Bytes - 03:46:51, 06 October 2024