Product Datasheet Search Results:

AP2RA04GMT-HF.pdf4 Pages, 96 KB, Original
AP2RA04GMT-HF
Advanced Power Electronics Corp. Usa
130 A, 40 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

A-power.com.tw/AP2RA04GMT-HF
{"Terminal Form":"FLAT","Power Dissipation Ambient-Max":"5 W","Avalanche Energy Rating (Eas)":"28.8 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"130 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0046 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"250 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1579 Bytes - 04:16:47, 29 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
MHAP2-BP-5.pdf6.221Request
FB-AP2-10-L.pdf15.741Request
MHAP2-BP-3.pdf6.221Request
FB-AP2-10-MPL.pdf15.741Request
FB-AP2-30-MPL.pdf15.741Request
FB-AP2-10-R.pdf15.741Request
MHAP2-BP-3-PI.pdf6.221Request
MHAP2-BG-NRH-35.pdf6.221Request
FB-AP2-30-U.pdf15.741Request
FB-AP2-10-MPK.pdf15.741Request
FB-AP2-80-MPL.pdf15.741Request
FB-AP2-30-MPK.pdf15.741Request