Product Datasheet Search Results:
4 Pages, 68 KB, Original- AP2310GN
- Advanced Power Electronics Corp. Usa
- 3 A, 60 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
5 Pages, 104 KB, Original- AP2310GN-HF
- Advanced Power Electronics Corp. Usa
- 3 A, 60 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP2310GN
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.38 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Tra...
1480 Bytes - 06:22:31, 26 November 2024
A-power.com.tw/AP2310GN-HF
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"10 A","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.38 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type...
1481 Bytes - 06:22:31, 26 November 2024
