Product Datasheet Search Results:
- AP2301BGN-HF
- Advanced Power Electronics Corp. Usa
- 2.8 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP2301BGN-HF
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.38 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","T...
1525 Bytes - 15:17:18, 29 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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1SAP230900R0000.pdf | 0.11 | 1 | Request | |
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AP2308G8ST.pdf | 2.04 | 1 | Request | |
AP2308G10ST.pdf | 2.04 | 1 | Request |