Product Datasheet Search Results:

AP11N50I.pdf4 Pages, 95 KB, Original
AP11N50I
Advanced Power Electronics Corp. Usa
11 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Product Details Search Results:

A-power.com.tw/AP11N50I
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V",...
1515 Bytes - 00:59:40, 29 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
CVCS_32_D3_20_AP113_X20_A99.pdf1.831Request
CVCS_25_D3_20_AP112_Z108_A99.pdf1.831Request
3WA9111-0AP11.pdf119.421Request
3VL9300-2AP11.pdf8.201Request
3VL9400-2AP11.pdf8.201Request
3WL9111-0AP11-0AA0.pdf47.551Request
6FC5800-0AP11-0YB0.pdf3.031Request
3WA9111-1AP11.pdf7.001Request
3WJ9111-0AP11.pdf50.431Request
3VL9800-2AP11.pdf8.201Request
1SAP112100R0270.pdf0.471Request
1SAP111100R0270.pdf0.431Request