Product Datasheet Search Results:

AP10N70S.pdf5 Pages, 171 KB, Original
AP10N70S
Advanced Power Electronics Corp. Usa
10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Product Details Search Results:

A-power.com.tw/AP10N70S
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Tr...
1504 Bytes - 00:16:07, 29 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
AP1011401.pdf0.021Request
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CVCS_40_D3_20_AP100_AP21_3.pdf1.831Request
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CVCS_25_D1_S2_10_AP108_A_12.pdf1.831Request
6FC5800-0AP10-0YB0.pdf3.031Request